SPN1304
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1304 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/2.0A,R
DS(ON)
=225mΩ@V
GS
=4.5V
20V/1.5A,R
DS(ON)
=315mΩ@V
GS
=2.5V
20V/1.0A,R
DS(ON)
=425mΩ@V
GS
=1.8V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2007/12/18
Ver.1
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SPN1304
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN1304S32RG
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPN1304S32RG : Tape Reel ; Pb – Free
Package
SOT-323
Part
Marking
04YW
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
20
±12
Unit
V
V
A
A
A
W
℃
℃
℃/W
2.0
1.5
10
1.6
1.25
0.8
-55/150
-55/150
105
2007/12/18
Ver.1
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SPN1304
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
= 250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V
T
J
=55℃
V
DS
≥
4.5V,V
GS
=5V
V
GS
=4.5V,I
D
=2.0A
V
GS
=2.5V,I
D
=1.5A
V
GS
=1.8V,I
D
=1.0A
V
DS
=10V,I
D
=1.2A
I
S
=0.5A,V
GS
=0V
20
0.35
1.0
100
1
5
2
0.150
0.210
0.320
2.6
0.8
0.225
0.315
0.425
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,V
GS
=4.5V,
I
D
≡0.7A
1.2
0.2
0.3
110
34
16
5
8
10
1.2
1.5
nC
V
DS
=10V
GS
=0V
f=1MHz
V
DD
=10V,R
L
=10Ω ,
I
D
≡1.0A
V
GEN
=4.5V ,R
G
=6Ω
pF
10
15
18
2.8
ns
2007/12/18
Ver.1
Page 3
SPN1304
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/12/18
Ver.1
Page 4
SPN1304
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/12/18
Ver.1
Page 5
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